Efficient 3D ‘Atomistic’ Simulation Technique for Studying of Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Decanano MOSFETs
نویسنده
چکیده
A 3D ‘atomistic’ simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 pm MOSFlETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson’s equation, followed by the solution of a simplified current continuity equation are used in the simulations.
منابع مشابه
Statistical 3D ‘atomistic’ simulation of decanano MOSFETs
A 3D statistical ‘atomistic’ simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the ‘atomistic’ simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architec...
متن کاملIncrease in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub-100 nm MOSFETs Due to Quantum Effects: A 3-D Density-Gradient Simulation Study
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 nm MOSFETs. The simulations have been performed using a three-dimensional (3-D) implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation ap...
متن کاملStatistically reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs
A 3D 'atomistic' simulation technique to study random impurity induced threshold voltage lowering and fluctuations in sub 0.1 w MOSFETs is presented. It allows stat.st.cal analys.s of random impurity effects down to the individual impurity level. Efficcnt algorithms based on a single solution of Poisson's equation, followed by the solution of a s.mpl.f.ed current continuity equation arc used in...
متن کاملIntrinsic Threshold Voltage Fluctuations in Decanano MOSFETs Due to Local Oxide Thickness Variations
Intrinsic threshold voltage fluctuations introduced by local oxide thickness variations (OTVs) in deep submicrometer (decanano) MOSFETs are studied using three-dimensional (3-D) numerical simulations on a statistical scale. Quantum mechanical effects are included in the simulations employing the density gradient (DG) formalism. The random Si/SiO2 and gate/SiO2 interfaces are generated from a po...
متن کاملEffect of Oxide Interface Roughness on the Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxides
In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanica...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2004